philips semiconductors product specification thyristors bt151f series general description quick reference data passivated thyristor in a full pack, plastic symbol parameter max. unit envelope, intended for use in applications requiring high bidirectional blocking voltage bt151f- 500r capability and high thermal cycling v drm , v rrm repetitive peak off-state 500 v performance. typical applications include i t(av) voltages motor control, industrial and domestic i t(rms) average on-state current 5.7 a lighting, heating and static switching. i tsm rms on-state current 9 a non-repetitive peak on-state 100 a current pinning - sot186 pin configuration symbol pin description 1 cathode 2 anode 3 gate case isolated limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit v drm , v rrm repetitive peak off-state - 500 1 v voltages i t(av) average on-state current half sine wave; t hs 87 ?c - 5.7 a i t(rms) rms on-state current all conduction angles - 9 a i tsm non-repetitive peak half sine wave; t j = 125 ?c prior on-state current to surge; with reapplied v drm(max) t = 10 ms - 100 a t = 8.3 ms - 110 a i 2 ti 2 t for fusing t = 10 ms - 50 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 50 ma; - 50 a/ s on-state current after di g /dt = 50 ma/ s triggering i gm peak gate current - 2 a v rgm peak reverse gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature ak g 123 case 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the rate of rise of current should not exceed 15 a/ s. january 2002 1 rev 1.000
philips semiconductors product specification thyristors bt151f series isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol r.m.s. isolation voltage from all f = 50-60 hz; sinusoidal - - 1500 v three terminals to external waveform; heatsink r.h. 65% ; clean and dustfree c isol capacitance from t2 to external f = 1 mhz - 12 - pf heatsink thermal resistances symbol parameter conditions min. typ. max. unit r th j-hs thermal resistance with heatsink compound - - 4.5 k/w junction to heatsink without heatsink compound - - 6.5 k/w r th j-a thermal resistance in free air - 55 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 2 15 ma i l latching current v d = 12 v; i gt = 0.1 a - 10 40 ma i h holding current v d = 12 v; i gt = 0.1 a - 7 20 ma v t on-state voltage i t = 23 a - 1.4 1.75 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.6 1.5 v v d = v drm(max) ; i t = 0.1 a; t j = 125 ?c 0.25 0.4 - v i d , i r off-state leakage current v d = v drm(max) ; v r = v rrm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; off-state voltage exponential waveform gate open circuit 50 130 - v/ s r gk = 100 ? 200 1000 - v/ s t gt gate controlled turn-on i tm = 40 a; v d = v drm(max) ; i g = 0.1 a; - 2 - s time di g /dt = 5 a/ s t q circuit commutated v d = 67% v drm(max) ; t j = 125 ?c; - 70 - s turn-off time i tm = 20 a; v r = 25 v; di tm /dt = 30 a/ s; dv d /dt = 50 v/ s; r gk = 100 ? january 2002 2 rev 1.000
philips semiconductors product specification thyristors bt151f series fig.1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a = form factor = i t(rms) / i t(av) . fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 10ms. fig.3. maximum permissible rms current i t(rms) , versus heatsink temperature t hs . fig.4. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t hs 87?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0123456 0 2 4 6 8 10 a = 1.57 1.9 2.2 2.8 4 if(av) / a ptot / w conduction angle form factor degrees 30 60 90 120 180 4 2.8 2.2 1.9 1.57 125 116 107 98 89 80 ths(max) / c a 1 10 100 1000 0 20 40 60 80 100 120 number of half cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t 10 100 1000 10us 100us 1ms 10ms t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t 0.01 0.1 1 10 0 5 10 15 20 25 surge duration / s it(rms) / a -50 0 50 100 150 0 2 4 6 8 10 ths / c it(rms) / a 87 c -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 tj / c vgt(tj) vgt(25 c) january 2002 3 rev 1.000
philips semiconductors product specification thyristors bt151f series fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-hs , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 5 10 15 20 25 30 vt / v it / a tj = 125 c tj = 25 c vo = 1.06 v rs = 0.0304 ohms typ max -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt145 tj / c il(tj) il(25 c) 0.001 0.01 0.1 1 10 tp / s zth j-hs (k/w) 10us 0.1ms 1ms 10ms 0.1s 1s 10s t p p t d without heatsink compound with heatsink compound -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c ih(tj) ih(25 c) 0 50 100 150 10 100 1000 10000 tj / c dvd/dt (v/us) gate open circuit rgk = 100 ohms january 2002 4 rev 1.000
philips semiconductors product specification thyristors bt151f series mechanical data dimensions in mm net mass: 2 g fig.13. sot186; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 seating plane 7.9 7.5 17 max 0.55 max 1.3 13.5 min 2.54 5.08 0.9 0.7 12 3 m 0.4 top view 3.5 max not tinned 4.4 january 2002 5 rev 1.000
philips semiconductors product specification thyristors bt151f series definitions data sheet status data sheet product definitions status 2 status 3 objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice preliminary data qualification this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change notification (cpcn) procedure snw-sq-650a limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. ? philips electronics n.v. 2002 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. 2 please consult the most recently issued datasheet before initiating or completing a design. 3 the product status of the device(s) described in this datasheet may have changed since this datasheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. january 2002 6 rev 1.000
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